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SSM4953M
P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Simple drive requirement Low on-resistance Fast switching
D1 D2 D1
D2
BVDSS RDS(ON) ID
G2 S2
-30V 53m -5A
SO-8
S1
G1
Description
MOSFETs from Silicon Standard Corp. provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. The SO-8 package is widely preferred for commercial and industrial surface mount applications and is well suited for low voltage applications such as DC/DC converters.
G1
D1
D2
G2 S1 S2
Absolute Maximum Ratings
Symbol VDS VGS I D @ TA=25C I D @ TA=70C I DM PD @ TA=25C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
1,2 3 3
Rating - 30 20 -5 -4 -20 2 0.016 -55 to 150 -55 to 150
Units V V A A A W W/C C C
Continuous Drain Current Total Power Dissipation Linear Derating Factor
Storage Temperature Range Operating Junction Temperature Range
Thermal Data
Symbol Rthj-amb Parameter Thermal Resistance Junction-ambient Max. Value 62.5 Unit C/W
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SSM4953M
Electrical Characteristics @ Tj=25oC (unless otherwise specified)
Symbol BVDSS Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min. Typ. Max. Units -30 -1 -0.1
-
V
V/C
BV DSS/ Tj
RDS(ON)
Breakdown Voltage Temperature Coefficient Reference to 25C, ID=-1mA
Static Drain-Source On-Resistance
VGS=-10V, ID=-5A VGS=-4.5V, ID=-4A
6 20 3.5 2 12 20 45 27 800 425 110
53 90 -3 -1 -25 -
m m V S uA uA nC nC nC ns ns ns ns pF pF pF
VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Gate Threshold Voltage Forward Transconductance
Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70oC)
o
VDS=VGS, ID=-250uA VDS=-10V, ID=-5A VDS=-30V, VGS=0V VDS=-24V, VGS=0V VGS= 20V ID=-5A VDS=-15V VGS=-10V VDS=-15V ID=-1A RG=6 ,VGS=-10V RD=15 VGS=0V VDS=-15V f=1.0MHz
Gate-Source Leakage Total Gate Charge
2
100 nA
Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
2
Source-Drain Diode
Symbol IS ISM VSD Parameter
Continuous Source Current ( Body Diode )
Test Conditions VD=VG=0V , VS=-1.2V
1
Min. Typ. Max. Units -1.7 -20 -1.2 A A V
Pulsed Source Current ( Body Diode )
Forward On Voltage
2
Tj=25C, IS=-1.7A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on FR4 board, t<10 sec.
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SSM4953M
20
20
T C =25 o C
V G =-10V V G =-8.0V
T C =150 o C
V G =-10V V G =-8.0V V G =-6.0V
15
V G =-6.0V -ID , Drain Current (A)
15
-ID , Drain Current (A)
V G =-4.0V
10
V G =-4.0V
10
5
5
0 0 1 2 3 4
0 0 1 2 3 4 5
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
1.8
Id=-5A T c =25C
70
I D =5A
1.6
V G =10V
RDSON (m )
60
Normalized R DS(ON)
1.4
1.2
50
1.0
40
0.8
30 3 4 5 6 7 8 9 10 11
0.6 -50 0 50 100 150
-V GS (V)
T j , Junction Temperature ( o C)
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance vs. Junction Temperature
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SSM4953M
6
3
5
2.5
-ID , Drain Current (A)
4
2
PD (W)
25 50 75 100 125 150
3
1.5
2
1
1
0.5
0
0 0 50 100 150
T c , Case Temperature ( o C)
T c , Case Temperature ( C)
o
Fig 5. Maximum Drain Current vs.
Fig 6. Typical Power Dissipation
Case Temperature
100
1
DUTY=0.5
Normalized Thermal Response (R thja)
0.2
10
1ms 10ms
0.1
0.1
0.05
-ID (A)
0.02
1
100ms
0.01
PDM
0.01
SINGLE PULSE
t T
Duty factor = t/T Peak Tj = P DM x Rthja + Ta
1s T c =25 o C Single Pulse
0.1 0.1 1 10 100
0.001 0.0001 0.001 0.01 0.1 1 10 100 1000
-V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
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SSM4953M
14
10000
f=1.0MHz
12
I D = -5A V DS = -15V
-VGS , Gate to Source Voltage (V)
10
1000
Ciss
8
C (pF)
Coss
6
100
Crss
4
2
0 0 5 10 15 20 25 30
10 1 5 9 13 17 21 25 29
Q G , Total Gate Charge (nC)
-V DS (V)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
100.00
3
10.00
T j =150 o C -IS(A) T j =25 o C
1.00
2
VGS(th) (V)
1 0
0.10
0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5
-50
0
50
100
150
-V SD (V)
T j , Junction Temperature ( o C)
Fig 11. Forward Characteristic of Reverse Diode
Fig 12. Gate Threshold Voltage vs. Junction Temperature
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SSM4953M
VDS
RD
90%
D
VDS
TO THE OSCILLOSCOPE 0.5 x RATED VDS
RG
G
10%
S -10 V VGS
VGS td(on) tr td(off) tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS TO THE OSCILLOSCOPE
QG -10V
D
0.5 x RATED VDS G S VGS
QGS
QGD
I
G
ID
Charge
Q
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of Silicon Standard Corporation or any third parties.
Rev.2.02 5/23/2004
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